Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass

dc.contributor.authorMateleshko, N.
dc.contributor.authorMitsa, V.
dc.contributor.authorStronski, A.
dc.contributor.authorVeres, M.
dc.contributor.authorKoos, M.
dc.contributor.authorAndriesh, A.M.
dc.date.accessioned2017-06-05T14:24:02Z
dc.date.available2017-06-05T14:24:02Z
dc.date.issued2004
dc.description.abstractIn this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With increasing the film deposition rate, their structure becomes more non-uniform as compared to that of glass. Raman spectra excited by laser radiation with energy bigger than the width of the optical gap indicate photomodification of the structure of As₂S₃ glass and fiber based on it.uk_UA
dc.identifier.citationNano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass / N. Mateleshko, V. Mitsa, A. Stronski, M. Veres, M. Koos, A.M. Andriesh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 462-464. — Бібліогр.: 5 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 61.43.Dq; 78.30.Ly
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119225
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleNano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glassuk_UA
dc.typeArticleuk_UA

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