Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass
dc.contributor.author | Mateleshko, N. | |
dc.contributor.author | Mitsa, V. | |
dc.contributor.author | Stronski, A. | |
dc.contributor.author | Veres, M. | |
dc.contributor.author | Koos, M. | |
dc.contributor.author | Andriesh, A.M. | |
dc.date.accessioned | 2017-06-05T14:24:02Z | |
dc.date.available | 2017-06-05T14:24:02Z | |
dc.date.issued | 2004 | |
dc.description.abstract | In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With increasing the film deposition rate, their structure becomes more non-uniform as compared to that of glass. Raman spectra excited by laser radiation with energy bigger than the width of the optical gap indicate photomodification of the structure of As₂S₃ glass and fiber based on it. | uk_UA |
dc.identifier.citation | Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass / N. Mateleshko, V. Mitsa, A. Stronski, M. Veres, M. Koos, A.M. Andriesh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 462-464. — Бібліогр.: 5 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 61.43.Dq; 78.30.Ly | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/119225 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass | uk_UA |
dc.type | Article | uk_UA |
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