Investigation of ArF* excimer laser VUV radiation action on sapphire

dc.contributor.authorBaschenko, S.M.
dc.contributor.authorGochelashvili, K.S.
dc.contributor.authorZakirov, R.M.
dc.contributor.authorKlimov, V.I.
dc.contributor.authorMikhkelsoo, V.T.
dc.contributor.authorProkhorov, O.M.
dc.date.accessioned2017-06-06T13:05:18Z
dc.date.available2017-06-06T13:05:18Z
dc.date.issued2001
dc.description.abstractAluminium components of products escaped from the surface of a sapphire target being illuminated by VUV emission of an ArF* laser are investigated using the method of laser-induced fluorescence combined with the transient time technique. Relative concentrations of aluminium atoms and ions as well as their distribution on velocities in the flow are measured. Determined is also the temperature and velocity of aluminium atoms. It is ascertained that within the range of used energy densities of 0.45 to 1.0 J/cm² extraction of materials can be made in three regimes, namely: the ablation, the plasma and mixed ones, intertransitions between them being of a cyclic character.uk_UA
dc.identifier.citationInvestigation of ArF* excimer laser VUV radiation action on sapphire / S.M. Baschenko, K.S. Gochelashvili, R.M. Zakirov, V.I. Klimov, V.T. Mikhkelsoo, O.M. Prokhorov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 290-297. — Бібліогр.: 14 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 32.50; 42.55.L; 79.20.D
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119330
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleInvestigation of ArF* excimer laser VUV radiation action on sapphireuk_UA
dc.typeArticleuk_UA

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