Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

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dc.contributor.authorFodchuk, І.М.
dc.contributor.authorDovganyuk, V.V.
dc.contributor.authorLitvinchuk, Т.V.
dc.contributor.authorKladko, V.P.
dc.contributor.authorSlobodian, М.V.
dc.contributor.authorGudymenko, O.Yo.
dc.contributor.authorSwiatek, Z.
dc.date.accessioned2017-05-29T13:35:02Z
dc.date.available2017-05-29T13:35:02Z
dc.date.issued2010
dc.description.abstractStructural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation.uk_UA
dc.identifier.citationStructural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.10.Kw, Nz, 61.72.Dd, Ff, 68.55.Ln
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118237
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleStructural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometryuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2