Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation

dc.contributor.author	Burbelo, R.
dc.contributor.author	Isaiev, M.
dc.contributor.author	Kuzmich, A.
dc.date.accessioned	2017-05-26T12:48:27Z
dc.date.available	2017-05-26T12:48:27Z
dc.date.issued	2011
dc.description.abstract	The analysis of photo-thermo-acoustic transformation in materials with the modified properties of a surface layer has been made in this work. Formation of a photoacoustic response in a layered structure of the type “implanted layer + crystalline Si substrate” as a result of its irradiation by one laser pulse with duration of 20 ns is analyzed.	uk_UA
dc.identifier.citation	Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation / R. Burbelo, M. Isaiev, A. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 167-169. — Бібліогр.: 4 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 78.20.nb, 81.70.Cv
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/117708
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation	uk_UA
dc.type	Article	uk_UA

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