Silver-related local centres in cadmium sulfide

dc.contributor.authorBorkovskaya, L.V.
dc.contributor.authorBulakh, B.M.
dc.contributor.authorKhomenkova, L.Yu.
dc.contributor.authorMarkevich, I.V.
dc.date.accessioned2017-06-05T17:12:01Z
dc.date.available2017-06-05T17:12:01Z
dc.date.issued2001
dc.description.abstractSilver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular to the c-axis. The only local centre that was proved to appear after Ag introduction and to disappear after its extraction was deep acceptor responsible for emission band λm = 610 nm. Photo-enhanced defect reaction resulting in photosensitivity degradation was shown to occur after Ag incorporation. It was found that diffusion anisotropy took place, Ag diffusion being some times faster parallel to the c-axis.uk_UA
dc.identifier.citationSilver-related local centres in cadmium sulfide / L.V. Borkovskaya, B.M. Bulakh, L.Yu. Khomenkova, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 163-167. — Бібліогр.: 16 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119266
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleSilver-related local centres in cadmium sulfideuk_UA
dc.typeArticleuk_UA

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