Silicon-on-insulator technology for microelectromechanical applications
| dc.contributor.author | Usenko, A.Y. | |
| dc.contributor.author | Carr, W.N. | |
| dc.date.accessioned | 2017-05-27T16:04:41Z | |
| dc.date.available | 2017-05-27T16:04:41Z | |
| dc.date.issued | 1999 | |
| dc.description.abstract | A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of SOI to fabricate advanced MEMS are given and future prospects MEMS on SOI are evaluated. | uk_UA |
| dc.description.sponsorship | This work is partially funded by US Ballistic Missile Defense Organization Contract № DASG60-98-M-0127. | uk_UA |
| dc.identifier.citation | Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 07.79.-v, 07.10.Pz,) 7.10 Cm, 07.07.Df, 85.40.Qx, 84.37.+q | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117927 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Silicon-on-insulator technology for microelectromechanical applications | uk_UA |
| dc.type | Article | uk_UA |
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