Polymorphism in chalcogenides of alkalineearth metals
dc.contributor.author | Drozdov, V.А. | |
dc.contributor.author | Pozhivatenko, V.V. | |
dc.contributor.author | Drozdov, М.А. | |
dc.contributor.author | Kovalchuk, V.V. | |
dc.contributor.author | Moiseev, L.M. | |
dc.contributor.author | Moiseeva, V.O. | |
dc.date.accessioned | 2017-06-14T16:56:20Z | |
dc.date.available | 2017-06-14T16:56:20Z | |
dc.date.issued | 2005 | |
dc.description.abstract | Calculations of structural phase transitions В1 - В2 under pressure in chalcogenides of alkaline-earth metals were carried out on the basis of approach of the local density functional theory, where as a fitting used was the constructive amendments of the potential by means of the electronic density received in a self-coordinated calculation using the approximation of the local density. | uk_UA |
dc.identifier.citation | Polymorphism in chalcogenides of alkalineearth metals / V.А. Drozdov, V.V. Pozhivatenko, М.А. Drozdov, V.V. Kovalchuk, L.M. Moiseev, V.O. Moiseeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 115-117. — Бібліогр.: 18 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 71.15.Mb | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/121573 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Polymorphism in chalcogenides of alkalineearth metals | uk_UA |
dc.type | Article | uk_UA |
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