Structural properties of chalcogenide glasses As₂Se₃ doped with manganese
dc.contributor.author | Paiuk, O.P. | |
dc.contributor.author | Revutska, L.O. | |
dc.contributor.author | Stronski, A.V. | |
dc.contributor.author | Gudymenko, A.Yo. | |
dc.contributor.author | Stanchu, H.V. | |
dc.contributor.author | Gubanova, A.A. | |
dc.contributor.author | Kryskov, Ts.A. | |
dc.date.accessioned | 2017-06-14T16:48:24Z | |
dc.date.available | 2017-06-14T16:48:24Z | |
dc.date.issued | 2016 | |
dc.description.abstract | The paper presents the results of studying structural properties inherent to chalcogenide glasses doped with manganese. Investigations of the structure were carried out using Raman spectroscopy and X-ray diffraction. The function of radial distribution of atomic density and Raman spectra have been obtained and analyzed. | uk_UA |
dc.description.sponsorship | The research was supported by the FP-7 SECURE-R21 project. | uk_UA |
dc.identifier.citation | Structural properties of chalcogenide glasses As₂Se₃ doped with manganese / O.P. Paiuk, L.O. Revutska, A.V. Stronski, A.Yo. Gudymenko, H.V. Stanchu, A.A. Gubanova, Ts.A. Kryskov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 205-207. — Бібліогр.: 10 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | DOI: 10.15407/spqeo19.02.205 | |
dc.identifier.other | PACS 61.05.cp, 78.30.Am, 78.30.Ly | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/121565 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Structural properties of chalcogenide glasses As₂Se₃ doped with manganese | uk_UA |
dc.type | Article | uk_UA |
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