Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

Fodchuk, I.M.; Gevyk, V.B.; Gimchinsky, O.G.; Kislovskii, E.N.; Kroytor, O.P.; Molodkin, V.B.; Olihovskii, S.I.; Pavelescu, E.M.; Pessa, M.

Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

dc.contributor.author	Fodchuk, I.M.
dc.contributor.author	Gevyk, V.B.
dc.contributor.author	Gimchinsky, O.G.
dc.contributor.author	Kislovskii, E.N.
dc.contributor.author	Kroytor, O.P.
dc.contributor.author	Molodkin, V.B.
dc.contributor.author	Olihovskii, S.I.
dc.contributor.author	Pavelescu, E.M.
dc.contributor.author	Pessa, M.
dc.date.accessioned	2017-05-28T16:43:41Z
dc.date.available	2017-05-28T16:43:41Z
dc.date.issued	2003
dc.description.abstract	The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa₁₋xAs₁₋yNy system has perfect crystalline structure, and interface between layers is coherent.	uk_UA
dc.identifier.citation	Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 68.65.Fg
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/118086
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells	uk_UA
dc.type	Article	uk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 4