Determination of surface parameters of solids by methods of X-ray total external reflection
dc.contributor.author | Balovsyak, S.V. | |
dc.contributor.author | Fodchuk, I.M. | |
dc.contributor.author | Lytvyn, P.M. | |
dc.date.accessioned | 2017-05-27T16:46:49Z | |
dc.date.available | 2017-05-27T16:46:49Z | |
dc.date.issued | 2003 | |
dc.description.abstract | The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The direct and inverse problem was solved, taking into consideration data obtained by the method of atomic-force microscopy: the theoretical curves of total external reflection are calculated and parameters describing a surface relief of the samples are restored. | uk_UA |
dc.identifier.citation | Determination of surface parameters of solids by methods of X-ray total external reflection / S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 41-46. — Бібліогр.: 9 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 61.10.Kw, 61.43.Hv, 68.35.-p | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117940 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Determination of surface parameters of solids by methods of X-ray total external reflection | uk_UA |
dc.type | Article | uk_UA |
Файли
Оригінальний контейнер
1 - 1 з 1
Завантаження...
- Назва:
- 09-Balovsyak.pdf
- Розмір:
- 524.06 KB
- Формат:
- Adobe Portable Document Format
Контейнер ліцензії
1 - 1 з 1
Завантаження...
- Назва:
- license.txt
- Розмір:
- 817 B
- Формат:
- Item-specific license agreed upon to submission
- Опис: