Conductivity type conversion in p-CdZnTe under pulsed laser irradiation

dc.contributor.authorTetyorkin, V.V.
dc.contributor.authorSukach, A.V.
dc.contributor.authorKrolevec, N.M.
dc.date.accessioned2017-05-30T14:19:18Z
dc.date.available2017-05-30T14:19:18Z
dc.date.issued2014
dc.description.abstractLaser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of several micrometers is observed. The surface-barrier structures were prepared by electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the photovoltaic response has been explained by formation of the graded band gap in the irradiated region. The direct current conductivity has been proved to be determined by the dislocation network.uk_UA
dc.description.sponsorshipThe authors would like to thank Prof. A. Medvid’ for providing samples of CdZnTe and helpful discussion.uk_UA
dc.identifier.citationConductivity type conversion in p-CdZnTe under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 78.20.nd, 73.50.Pz
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118500
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleConductivity type conversion in p-CdZnTe under pulsed laser irradiationuk_UA
dc.typeArticleuk_UA

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