Conductivity type conversion in p-CdZnTe under pulsed laser irradiation
dc.contributor.author | Tetyorkin, V.V. | |
dc.contributor.author | Sukach, A.V. | |
dc.contributor.author | Krolevec, N.M. | |
dc.date.accessioned | 2017-05-30T14:19:18Z | |
dc.date.available | 2017-05-30T14:19:18Z | |
dc.date.issued | 2014 | |
dc.description.abstract | Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of several micrometers is observed. The surface-barrier structures were prepared by electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the photovoltaic response has been explained by formation of the graded band gap in the irradiated region. The direct current conductivity has been proved to be determined by the dislocation network. | uk_UA |
dc.description.sponsorship | The authors would like to thank Prof. A. Medvid’ for providing samples of CdZnTe and helpful discussion. | uk_UA |
dc.identifier.citation | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 78.20.nd, 73.50.Pz | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118500 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation | uk_UA |
dc.type | Article | uk_UA |
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