Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering

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dc.contributor.authorPidkova, V.
dc.contributor.authorBrodnikovska, I.
dc.contributor.authorDuriagina, Z.
dc.contributor.authorPetrovskyy, V.
dc.date.accessioned2017-06-04T13:48:57Z
dc.date.available2017-06-04T13:48:57Z
dc.date.issued2014-12-12
dc.description.abstractDielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed.uk_UA
dc.identifier.citationStructure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ.uk_UA
dc.identifier.issn1027-5495
dc.identifier.otherDOI: http://dx.doi.org/10.15407/fm22.01.034
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119115
dc.language.isoenuk_UA
dc.publisherНТК «Інститут монокристалів» НАН Україниuk_UA
dc.relation.ispartofFunctional Materials
dc.statuspublished earlieruk_UA
dc.subjectCharacterization and propertiesuk_UA
dc.titleStructure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputteringuk_UA
dc.typeArticleuk_UA

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Functional Materials, 2015, № 1