Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

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dc.contributor.authorBoltovets, N.S.
dc.contributor.authorBasanets, V.V.
dc.contributor.authorIvanov, V.N.
dc.contributor.authorKrivutsa, V.A.
dc.contributor.authorTsvir, A.V.
dc.contributor.authorBelyaev, A.E.
dc.contributor.authorKonakova, R.V.
dc.contributor.authorLyapin, V.G.
dc.contributor.authorMilenin, V.V.
dc.contributor.authorSoloviev, E.A.
dc.contributor.authorVenger, E.F.
dc.contributor.authorVoitsikhovskyi, D.I.
dc.contributor.authorKholevchuk, V.V.
dc.contributor.authorMitin, V.F.
dc.date.accessioned2017-06-13T16:15:22Z
dc.date.available2017-06-13T16:15:22Z
dc.date.issued2000
dc.description.abstractWe investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability.uk_UA
dc.description.sponsorshipThe development of varactor diodes and resonant tunneling diodes, as well as fast-operating switching diodes for the 33-78 GHz frequency range and IMPATT diodes for the 33-37 and 70-77 GHz frequency ranges, was carried out under the INCO-COPERNICUS Program (Project No 977131 "MEMSWAVE").uk_UA
dc.identifier.citationMicrowave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 07.07.D, 81.05.J, 85.30.K
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121166
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleMicrowave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metalsuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3