Recrystallization processes in screen-printed CdS films

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dc.contributor.authorKlad’ko, V.P.
dc.contributor.authorLytvyn, O.S.
dc.contributor.authorLytvyn, P.M.
dc.contributor.authorOsipenok, N.M.
dc.contributor.authorPekar, G.S.
dc.contributor.authorProkopenko, I.V.
dc.contributor.authorSingaevsky, A.F.
dc.contributor.authorKorchevoy, A.A.
dc.date.accessioned2017-06-13T16:32:44Z
dc.date.available2017-06-13T16:32:44Z
dc.date.issued2002
dc.description.abstractKinetics of recrystallization in screen-printed polycrystalline CdS films has been investigated by X-ray structure analysis and optical microscopy. The relation between the crystallite size, crystallite orientation and the macrostrain, as well as their dependence on heat treatment regimes is established. It is shown that single-phase CdS films having a thickness of some tens microns, large grain size and low residual strain can be produced at optimum technological regimes. The films obtained are suitable for fabrication of CdS/CdTe solar cells.uk_UA
dc.description.sponsorshipFinancial support for this work came through USTC project # 1088.uk_UA
dc.identifier.citationRecrystallization processes in screen-printed CdS films / V.P. Klad’ko, O.S. Lytvyn, P.M. Lytvyn, N.M. Osipenok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky, A.A. Korchevoy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 170-175. — Бібліогр.: 19 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 72.20.D, 84.60.J, 61.72.Dd, 61.72.Mm, 68.35.Bs
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121180
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleRecrystallization processes in screen-printed CdS filmsuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 2