Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
dc.contributor.author | Dobrovolskyi, Yu. | |
dc.contributor.author | Pidkamin, L. | |
dc.contributor.author | Brus, V. | |
dc.contributor.author | Kuzenko, V. | |
dc.date.accessioned | 2017-05-30T14:11:53Z | |
dc.date.available | 2017-05-30T14:11:53Z | |
dc.date.issued | 2014 | |
dc.description.abstract | A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows calculating the construction that possesses low sensitivity for the wavelengths larger than 600 nm and maximal values near the wavelength 254 nm. | uk_UA |
dc.identifier.citation | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 61.80.Ba, 85.60.Dw | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118492 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm | uk_UA |
dc.type | Article | uk_UA |
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