Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures

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dc.contributor.authorIliash, S.A.
dc.contributor.authorKondratenko, S.V.
dc.contributor.authorYakovliev, A.S.
dc.contributor.authorKunets, Vas.P.
dc.contributor.authorMazur, Yu.I.
dc.contributor.authorSalamo, G.J.
dc.date.accessioned2017-06-14T15:20:39Z
dc.date.available2017-06-14T15:20:39Z
dc.date.issued2016
dc.description.abstractThermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed.uk_UA
dc.identifier.citationThermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherDOI: 10.15407/spqeo19.01.075
dc.identifier.otherPACS 72.40.+w, 73.40.-e, 73.63.Nm
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121528
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructuresuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1