Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
dc.contributor.author | Makhniy, V.P. | |
dc.contributor.author | Slyotov, М.М. | |
dc.contributor.author | Tkachenko, I.V. | |
dc.contributor.author | Slyotov, А.М. | |
dc.date.accessioned | 2017-05-31T05:13:52Z | |
dc.date.available | 2017-05-31T05:13:52Z | |
dc.date.issued | 2012 | |
dc.description.abstract | Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied. | uk_UA |
dc.identifier.citation | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 78.66.-w | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118719 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates | uk_UA |
dc.type | Article | uk_UA |
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