Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell

dc.contributor.authorAbdelhakim Mahdjoub
dc.contributor.authorLazhar Hadjeris
dc.date.accessioned2017-05-26T18:52:15Z
dc.date.available2017-05-26T18:52:15Z
dc.date.issued2013
dc.description.abstractA photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin layers, with a good efficiency can be achieved by simple, easy to implement and low cost techniques. The high refractive index materials used as absorbers in photovoltaic cells cause high reflection losses (about 30%). Thin CdS and ZnO films that are, respectively, the buffer layer and the window of the cell have lower indices and are naturally suited to antireflective applications. Also, a suitable choice of the film thickness leads to minimization of reflection losses, resulting in a significant improvement of the photovoltaic efficiency. The aim of this work is to provide easy solutions that reduce reflection losses to less than 4% while respecting technological constraints.uk_UA
dc.identifier.citationReflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell / Abdelhakim Mahdjoub, Lazhar Hadjeris // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 379-381. — Бібліогр.: 8 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 84.60.Jt, 86.40.jn
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117813
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleReflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic celluk_UA
dc.typeArticleuk_UA

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