Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals

dc.contributor.authorMakara, V.A.
dc.contributor.authorSteblenko, L.P.
dc.contributor.authorKolchenko, Yu.L.
dc.contributor.authorNaumenko, S.M.
dc.contributor.authorLisovsky, I.P.
dc.contributor.authorMazunov, D.O.
dc.contributor.authorMokliak, Yu.Yu.
dc.date.accessioned2017-06-14T11:01:37Z
dc.date.available2017-06-14T11:01:37Z
dc.date.issued2006
dc.description.abstractIR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals.uk_UA
dc.description.sponsorshipThis work was partially supported by Joint fundamental investigations project of State Fund of fundamental investigations of Ukraine and Belarussian Republican Fund of fundamental investigations “DFFD– BRFFD–2005” (project No 10.01/008).uk_UA
dc.identifier.citationEffect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals / V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, I.P. Lisovsky, D.O. Mazunov, Yu.Yu. Mokliak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 1-3. — Бібліогр.: 9 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 81.40.-z
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121440
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleEffect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystalsuk_UA
dc.typeArticleuk_UA

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