Mechanisms of carrier transport in CdTe polycrystalline films

dc.contributor.authorSukach, A.V.
dc.contributor.authorTetyorkin, V.V.
dc.contributor.authorKrolevec, N.M.
dc.date.accessioned2017-05-29T13:33:28Z
dc.date.available2017-05-29T13:33:28Z
dc.date.issued2010
dc.description.abstractCadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an activated process such as thermionic emission. The carrier transport across barriers is influenced by traps in the surface barrier regions. The non-annealed films exhibited stable electrical parameters and high photosensitivity during five-year storage under laboratory conditions.uk_UA
dc.identifier.citationMechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 78.30.L
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118236
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleMechanisms of carrier transport in CdTe polycrystalline filmsuk_UA
dc.typeArticleuk_UA

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