Optical studies of as-deposited and annealed Cu₇GeS₅I thin films
dc.contributor.author | Studenyak, I.P. | |
dc.contributor.author | Bendak, A.V. | |
dc.contributor.author | Rybak, S.O. | |
dc.contributor.author | Izai, V.Yu. | |
dc.contributor.author | Kúš, P. | |
dc.contributor.author | Mikula, M. | |
dc.date.accessioned | 2017-06-14T16:46:48Z | |
dc.date.available | 2017-06-14T16:46:48Z | |
dc.date.issued | 2016 | |
dc.description.abstract | Cu₇GeS₅I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu₇GeS₅I thin films were measured in the temperature interval 77–300 K. The temperature behaviour of Urbach absorption edge and dispersion of refractive index for as-deposited and annealed Cu₇GeS₅I thin films was analyzed. Influence of annealing on the optical parameters and disordering processes in Cu₇GeS₅I thin films was studied. | uk_UA |
dc.description.sponsorship | Andrii Bendak (contract number 51501903) is strongly grateful to the International Visegrad Fund scholarship for the funding of the project. | uk_UA |
dc.identifier.citation | Optical studies of as-deposited and annealed Cu₇GeS₅I thin films / I.P. Studenyak, A.V. Bendak, S.O. Rybak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 192-196. — Бібліогр.: 15 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | DOI: 10.15407/spqeo19.02.192 | |
dc.identifier.other | PACS 78.40.Ha, 77.80.Bh | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/121563 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Optical studies of as-deposited and annealed Cu₇GeS₅I thin films | uk_UA |
dc.type | Article | uk_UA |
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