Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films

dc.contributor.authorBacherikov, Yu.Yu.
dc.contributor.authorBoltovets, N.S.
dc.contributor.authorKonakova, R.V.
dc.contributor.authorKolyadina, E.Yu.
dc.contributor.authorLedn’ova, T.M.
dc.contributor.authorOkhrimenko, O.B.
dc.date.accessioned2017-05-29T14:13:16Z
dc.date.available2017-05-29T14:13:16Z
dc.date.issued2012
dc.description.abstractIn this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). According to experimental results obtained from optical absorption and photoluminescence spectra as well as from measurements of internal mechanical stresses, one can conclude that the thin SiO₂ films prepared using the technique (ii) possess SiO₂/SiC interface with a less number of defective states than that for SiO₂ films prepared using the technique (i).uk_UA
dc.identifier.citationInterface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 07.10.Lw, 81.10.Bk, Dn, 77.84.Bw, 78.40, 78.55, 81.16.Pr
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118258
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleInterface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin filmsuk_UA
dc.typeArticleuk_UA

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