Simple method for SiC nanowires fabrication

dc.contributor.author	Kiselov, V.S.
dc.contributor.author	Lytvyn, O.S.
dc.contributor.author	Yukhymchuk, V.O.
dc.contributor.author	Belyaev, A.E.
dc.date.accessioned	2017-05-25T15:57:17Z
dc.date.available	2017-05-25T15:57:17Z
dc.date.issued	2011
dc.description.abstract	In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater.	uk_UA
dc.identifier.citation	Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81.07.Gf
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/117602
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Simple method for SiC nanowires fabrication	uk_UA
dc.type	Article	uk_UA

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