Photostimulated etching of germanium chalcogenide films

dc.contributor.authorDan’ko, V.A.
dc.contributor.authorIndutnyi, I.Z.
dc.contributor.authorMyn’ko, V.I.
dc.contributor.authorShepeliavyi, P.E.
dc.contributor.authorLukyanyuk, M.V.
dc.contributor.authorLitvin, O.S.
dc.date.accessioned2017-05-31T05:19:50Z
dc.date.available2017-05-31T05:19:50Z
dc.date.issued2012
dc.description.abstractThe new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. A possible mechanism for the photoinduced etching of ChG films has been discussed. The high-frequency diffraction gratings on germanium ChG – more environmentally acceptable compounds than traditionally used arsenic chalcogenides – were recorded using the method of interference immersion photolithography with photoinduced etching.uk_UA
dc.identifier.citationPhotostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 81.65.Cf
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118724
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titlePhotostimulated etching of germanium chalcogenide filmsuk_UA
dc.typeArticleuk_UA

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