Studies of CdHgTe as a material for x- and γ-ray detectors

dc.contributor.author	Kosyachenko, L.A.
dc.contributor.author	Kulchynsky, V.V.
dc.contributor.author	Maslyanchuk, O.L.
dc.contributor.author	Paranchych, S.Yu.
dc.contributor.author	Sklyarchuk, V.M.
dc.date.accessioned	2017-05-28T05:45:33Z
dc.date.available	2017-05-28T05:45:33Z
dc.date.issued	2003
dc.description.abstract	Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination velocity have been found.	uk_UA
dc.identifier.citation	Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.80.Ey
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/118001
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Studies of CdHgTe as a material for x- and γ-ray detectors	uk_UA
dc.type	Article	uk_UA

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