Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films

Lisovskyy, I.P.; Litovchenko, V.G.; Zlobin, S.O.; Voitovych, M.V.; Khatsevich, I.M.; Indutnyy, I.Z.; Shepeliavyi, P.E.; Kolomys, O.F.

Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films

dc.contributor.author	Lisovskyy, I.P.
dc.contributor.author	Litovchenko, V.G.
dc.contributor.author	Zlobin, S.O.
dc.contributor.author	Voitovych, M.V.
dc.contributor.author	Khatsevich, I.M.
dc.contributor.author	Indutnyy, I.Z.
dc.contributor.author	Shepeliavyi, P.E.
dc.contributor.author	Kolomys, O.F.
dc.date.accessioned	2017-05-25T18:44:48Z
dc.date.available	2017-05-25T18:44:48Z
dc.date.issued	2011
dc.description.abstract	The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed.	uk_UA
dc.identifier.citation	Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 68.55.Ln, 78.30.Ap, 81.40.Ef
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/117655
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films	uk_UA
dc.type	Article	uk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 1