Acoustic-emission method for controlling the defect-formation process in light-emitting structures

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dc.contributor.authorLyashenko, O.V.
dc.contributor.authorVlasenko, A.I.
dc.contributor.authorVeleschuk, V.P.
dc.contributor.authorKisseluk, M.P.
dc.date.accessioned2017-05-30T06:54:41Z
dc.date.available2017-05-30T06:54:41Z
dc.date.issued2010
dc.description.abstractСomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence intensity, fluctuation of current and light. It has been ascertained that natural ageing leads to a general improvement of some practically important parameters of light-emitting structures, in particular to increase of maximal admissible currents and reliability.uk_UA
dc.identifier.citationAcoustic-emission method for controlling the defect-formation process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 43.35.+d, 43.50.+y, 72.70.+m, 73.50.TD, 78.60.Fi, 78.66.Fd
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118399
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleAcoustic-emission method for controlling the defect-formation process in light-emitting structuresuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3