Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes

Oksanich, A.P.; Pritchin, S.E.; Vasheruk, A.V.

Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes

dc.contributor.author	Oksanich, A.P.
dc.contributor.author	Pritchin, S.E.
dc.contributor.author	Vasheruk, A.V.
dc.date.accessioned	2017-06-04T15:51:17Z
dc.date.available	2017-06-04T15:51:17Z
dc.date.issued	2004
dc.description.abstract	The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines the results of computer modeling. The results of theoretical and experimental investigations carried make possible to predict oxygen concentration in Si ingot and define the technology parameters for growing ingots of stated concentration.	uk_UA
dc.identifier.citation	Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 42.65; 42.70; 61.70
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/119116
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes	uk_UA
dc.type	Article	uk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 3