Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique

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dc.contributor.authorVolodin, N.M.
dc.contributor.authorZavyalova, L.V.
dc.contributor.authorKirillov, A.I.
dc.contributor.authorSvechnikov, S.V.
dc.contributor.authorProkopenko, I.V.
dc.contributor.authorKhanova, A.V.
dc.date.accessioned2017-06-03T04:56:50Z
dc.date.available2017-06-03T04:56:50Z
dc.date.issued1999
dc.description.abstractThe polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, which allowed us to determine the activation energies and the reaction type. The investigations of the structure and surface morphology of films were carried out. The technological conditions are determined providing the fabrication of single-phase SmS films of cubic modification with the most ordered crystal structure.uk_UA
dc.description.sponsorshipThe authors express their deep gratitude to professor G.A.Domrachev for valuable comments and to E.A Shchupak for synthesis of compounds.uk_UA
dc.identifier.citationInvestigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique / N.M. Volodin, L.V. Zavyalova, A.I. Kirillov, S.V. Svechnikov, I.V. Prokopenko, A.V. Khanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 78-83. — Бібліогр.: 9 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 81.15.G, 68.55.J, 61.66
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119064
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleInvestigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD techniqueuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 2