Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties

dc.contributor.authorParanchych, S.Yu.
dc.contributor.authorTanasyuk, Yu.V.
dc.contributor.authorRomanyuk, V.R.
dc.contributor.authorRomanyuk, O.S.
dc.contributor.authorMakogonenko, V.M.
dc.contributor.authorAndriychuk, M.D.
dc.contributor.authorSynylo, S.V.
dc.contributor.authorIvonyak, Yu.I.
dc.date.accessioned2017-06-04T16:47:00Z
dc.date.available2017-06-04T16:47:00Z
dc.date.issued2004
dc.description.abstractSingle crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed investigations, the grown crystals proved to be satisfactorily homogeneous and highly sensitive within technically important spectral range of 1–1.5 mm. Energy position of vanadium and titanium level in the material under investigation determined from R(T) dependence is of about 0.73–0.82 eV; 0.65–0.72 eV, respectively.uk_UA
dc.identifier.citationSolid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties / S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 227-230. — Бібліогр.: 13 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 42.65; 42.70; 61.70
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119135
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleSolid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and propertiesuk_UA
dc.typeArticleuk_UA

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