Research of Structural Quality of Big-Size KDP Crystals
dc.contributor.author | Salo, V.I. | |
dc.contributor.author | Tkachenko, V.F. | |
dc.contributor.author | Puzikov, V.M. | |
dc.date.accessioned | 2017-05-31T19:26:16Z | |
dc.date.available | 2017-05-31T19:26:16Z | |
dc.date.issued | 2008 | |
dc.description.abstract | The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown crystal by X-ray diffraction methods with high resolution. It has been determined that, regardless of the seed form, the transitional layer in grown crystals reaches the value of~12 mm. The nonmonotone variation of the crystal lattice parameter (∆d/d) within ±2.5·10⁻⁵ and the halfwidth of a diffraction reflection curve (β = 5.5÷8 arcs for direction [103] and β = 7÷9 arcs for direction [100]) and the increase of the integral power of reflection of the X-ray beam IR by 1.5 times are observed in the transitional lay | uk_UA |
dc.identifier.citation | Research of Structural Quality of Big-Size KDP Crystals / V. I. Salo, V. F. Tkachenko, V.M. Puzikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 132-135. — Бібліогр.: 7 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 61.10.-i | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118853 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Research of Structural Quality of Big-Size KDP Crystals | uk_UA |
dc.type | Article | uk_UA |
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