Research of Structural Quality of Big-Size KDP Crystals

dc.contributor.authorSalo, V.I.
dc.contributor.authorTkachenko, V.F.
dc.contributor.authorPuzikov, V.M.
dc.date.accessioned2017-05-31T19:26:16Z
dc.date.available2017-05-31T19:26:16Z
dc.date.issued2008
dc.description.abstractThe faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown crystal by X-ray diffraction methods with high resolution. It has been determined that, regardless of the seed form, the transitional layer in grown crystals reaches the value of~12 mm. The nonmonotone variation of the crystal lattice parameter (∆d/d) within ±2.5·10⁻⁵ and the halfwidth of a diffraction reflection curve (β = 5.5÷8 arcs for direction [103] and β = 7÷9 arcs for direction [100]) and the increase of the integral power of reflection of the X-ray beam IR by 1.5 times are observed in the transitional layuk_UA
dc.identifier.citationResearch of Structural Quality of Big-Size KDP Crystals / V. I. Salo, V. F. Tkachenko, V.M. Puzikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 132-135. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.10.-i
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118853
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleResearch of Structural Quality of Big-Size KDP Crystalsuk_UA
dc.typeArticleuk_UA

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