Investigation on the bandgap of semiconductor solid solution Hg₁₋x₋y₋zCdxMnyZnzTe

dc.contributor.author	Zhikharevich, V.V.
dc.contributor.author	Ostapov, S.E.
dc.contributor.author	Deibuk, V.G.
dc.date.accessioned	2017-06-15T03:01:34Z
dc.date.available	2017-06-15T03:01:34Z
dc.date.issued	2006
dc.description.abstract	The paper presents a investigation on the bandgap of a new narrow-gap semiconductor solid solution Hg₁₋x₋y₋zCdxMnyZnzTe via optical measurements. Modeling of the edge of fundamental absorption for Hg₁₋x₋y₋zCdxMnyZnzTe is performed and specifying values of the bandgap at room temperature in crystals under study are determined.	uk_UA
dc.identifier.citation	Investigation on the bandgap of semiconductor solid solution Hg₁₋x₋y₋zCdxMnyZnzTe / V.V. Zhikharevich, S.E. Ostapov, V.G. Deibuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 17-21. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.20.Dp; 72.20.Fr; 72.20.My
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/121612
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Investigation on the bandgap of semiconductor solid solution Hg₁₋x₋y₋zCdxMnyZnzTe	uk_UA
dc.type	Article	uk_UA

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