The influence of BaF₂ on scintillation properties of PbWO₄ crystal

dc.contributor.authorYoubao Wan
dc.contributor.authorJianxing Zhang
dc.contributor.authorRurong Wu
dc.contributor.authorSanfa Xing
dc.contributor.authorHui Yang
dc.date.accessioned2018-06-24T06:13:17Z
dc.date.available2018-06-24T06:13:17Z
dc.date.issued2007
dc.description.abstractPbWO₄ crystals doped with BaF₂ was grown up by using modified temperature-grads technique. The crystal defects were investigated by chemical etching. The XRD of the sample has shown that the peaks were at normal sites, but the lattice parameters was slightly larger than that of pure PbWO₄ crystal. The transmittance spectrum along c axis of the PbWO₄:BaF₂ crystal has evidenced a higher transmittance than that of pure PbWO4 crystal. The luminescence intensity of the 400-450 nm peak in X-ray excited luminescence spectrum of the PbWO₄:BaF₂ crystal is increased significantly, about twice than that of pure PbWO₄ crystal. The light yield of BaF₂ doped PbWO₄ crystal was enhanced up to 2.5 times. These results show that BaF₂ doping of PbWO₄ can improve scintillation properties of the crystal for medium-energy particle detection.uk_UA
dc.identifier.citationThe influence of BaF₂ on scintillation properties of PbWO₄ crystal / Youbao Wan, Jianxing Zhang, Rurong Wu, Sanfa Xing, Hui Yang // Functional Materials. — 2007. — Т. 14, № 4. — С. 446-453. — Бібліогр.: 10 назв. — англ.uk_UA
dc.identifier.issn1027-5495
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/140211
dc.language.isoenuk_UA
dc.publisherНТК «Інститут монокристалів» НАН Україниuk_UA
dc.relation.ispartofFunctional Materials
dc.statuspublished earlieruk_UA
dc.subjectCharacterization and propertiesuk_UA
dc.titleThe influence of BaF₂ on scintillation properties of PbWO₄ crystaluk_UA
dc.title.alternativeВплив BaF₂ на сцинтиляційні властивості кристалів PbWO₄uk_UA
dc.typeArticleuk_UA

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