Review of a monographs

Abstract

In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered.