The nature of red emission in porous silicon

Скорочена інформація про документ
dc.contributor.authorKhomenkova, L.Yu.
dc.contributor.authorKorsunska, N.E.
dc.contributor.authorBulakh, B.M.
dc.contributor.authorSheinkman, M.K.
dc.contributor.authorStara, T.R.
dc.date.accessioned2017-06-12T14:40:11Z
dc.date.available2017-06-12T14:40:11Z
dc.date.issued2005
dc.description.abstractThe photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission band and is present in as-prepared samples, is connected with excitonic recombination in Si nanocrystals. The second one that causes red emission band appears during aging is supposed to be connected with carrier recombination through oxide-related defects. It is shown that this channel dominates in aged samples.uk_UA
dc.identifier.citationThe nature of red emission in porous silicon / L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K. Sheinkman, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 60-63. — Бібліогр.: 17 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 78.67.-n, 78.30-j, 78.55.-m.
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120640
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThe nature of red emission in porous siliconuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
09-Khomenkova.pdf
Розмір:
200.96 KB
Формат:
Adobe Portable Document Format
Завантажити

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис:
Завантажити

Колекція

Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 1