Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption
dc.contributor.author | Bozhko, V.V. | |
dc.contributor.author | Halyan, V.V. | |
dc.contributor.author | Parasyuk, O.V. | |
dc.date.accessioned | 2017-06-13T16:02:09Z | |
dc.date.available | 2017-06-13T16:02:09Z | |
dc.date.issued | 2002 | |
dc.description.abstract | Results of investigations of spectral characteristics in the fundamental absorption range for the glass-like alloys HgSe - GeSe₂ are represented. To explain the phenomenon of anomaly growth of the static disorder, the model of deforming tensions is discussed. The hypothesis concerning a sharp change of physical-and-chemical properties for the transition over the double eutectic point on the stable phase diagram of the HgSe - GeSe₂ system with a changing glass-creating matrix is suggested. | uk_UA |
dc.identifier.citation | Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption / V.V. Bozhko, V.V. Halyan, O.V. Parasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 163-169. — Бібліогр.: 17 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 78.20.Bh, 78.40 | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/121162 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption | uk_UA |
dc.type | Article | uk_UA |
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