The increase of crystal growing rate without damaging the smoothness of interface border

dc.contributor.authorKanishchev, V.N.
dc.date.accessioned2017-06-10T11:08:09Z
dc.date.available2017-06-10T11:08:09Z
dc.date.issued2013
dc.description.abstractThis paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one.uk_UA
dc.identifier.citationThe increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1027-5495
dc.identifier.otherDOI: dx.doi.org/10.15407/fm20.01.123
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119910
dc.language.isoenuk_UA
dc.publisherНТК «Інститут монокристалів» НАН Україниuk_UA
dc.relation.ispartofFunctional Materials
dc.statuspublished earlieruk_UA
dc.subjectTechnologyuk_UA
dc.titleThe increase of crystal growing rate without damaging the smoothness of interface borderuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
20-Kanishchev.pdf
Розмір:
997.58 KB
Формат:
Adobe Portable Document Format
Опис:
Стаття

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис: