The increase of crystal growing rate without damaging the smoothness of interface border
dc.contributor.author | Kanishchev, V.N. | |
dc.date.accessioned | 2017-06-10T11:08:09Z | |
dc.date.available | 2017-06-10T11:08:09Z | |
dc.date.issued | 2013 | |
dc.description.abstract | This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one. | uk_UA |
dc.identifier.citation | The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. | uk_UA |
dc.identifier.issn | 1027-5495 | |
dc.identifier.other | DOI: dx.doi.org/10.15407/fm20.01.123 | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/119910 | |
dc.language.iso | en | uk_UA |
dc.publisher | НТК «Інститут монокристалів» НАН України | uk_UA |
dc.relation.ispartof | Functional Materials | |
dc.status | published earlier | uk_UA |
dc.subject | Technology | uk_UA |
dc.title | The increase of crystal growing rate without damaging the smoothness of interface border | uk_UA |
dc.type | Article | uk_UA |
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