Disappearance of aligning properties of deposited SiOx films as caused by external factors

dc.contributor.authorKolomzarov, Yu.
dc.contributor.authorOleksenko, P.
dc.contributor.authorSorokin, V.
dc.contributor.authorTytarenko, P.
dc.contributor.authorZelinskyy, R.
dc.date.accessioned2017-06-15T03:09:42Z
dc.date.available2017-06-15T03:09:42Z
dc.date.issued2006
dc.description.abstractThermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed.uk_UA
dc.identifier.citationDisappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.30.Gd, 81.65.Cf, 61.25.Em
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121620
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleDisappearance of aligning properties of deposited SiOx films as caused by external factorsuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
13-Kolomzarov.pdf
Розмір:
638.77 KB
Формат:
Adobe Portable Document Format

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис: