A model for non-thermal action of microwave radiation on oxide film/semiconductor structures

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dc.contributor.authorOkhrimenko, O.B.
dc.date.accessioned2017-05-30T14:27:20Z
dc.date.available2017-05-30T14:27:20Z
dc.date.issued2014
dc.description.abstractA model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs structures. It assumes that the centers of electron-hole recombination are redistributed because of resonance interaction between dislocations of certain length and microwave radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes.uk_UA
dc.description.sponsorshipThe author is indebted to Prof. A.M. Svetlichnyi for his interest in this work and valuable discussionsuk_UA
dc.identifier.citationA model for non-thermal action of microwave radiation on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 78.70.Fy, 78.70.Gq
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118513
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleA model for non-thermal action of microwave radiation on oxide film/semiconductor structuresuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 3