Dislocation emission caused by different types of nanoscale deformation defects in CdTe
dc.contributor.author | Babentsov, V.N. | |
dc.contributor.author | Boyko, V.A. | |
dc.contributor.author | Gasan-zade, S.G. | |
dc.contributor.author | Shepelski, G.A. | |
dc.contributor.author | Stariy, S.V. | |
dc.date.accessioned | 2017-05-30T05:40:07Z | |
dc.date.available | 2017-05-30T05:40:07Z | |
dc.date.issued | 2014 | |
dc.description.abstract | Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces. | uk_UA |
dc.identifier.citation | Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 61.72.Ji, 61.72.Lk, 78.55.Et | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118357 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Dislocation emission caused by different types of nanoscale deformation defects in CdTe | uk_UA |
dc.type | Article | uk_UA |
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