Dislocation emission caused by different types of nanoscale deformation defects in CdTe

dc.contributor.authorBabentsov, V.N.
dc.contributor.authorBoyko, V.A.
dc.contributor.authorGasan-zade, S.G.
dc.contributor.authorShepelski, G.A.
dc.contributor.authorStariy, S.V.
dc.date.accessioned2017-05-30T05:40:07Z
dc.date.available2017-05-30T05:40:07Z
dc.date.issued2014
dc.description.abstractDislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces.uk_UA
dc.identifier.citationDislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.72.Ji, 61.72.Lk, 78.55.Et
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118357
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleDislocation emission caused by different types of nanoscale deformation defects in CdTeuk_UA
dc.typeArticleuk_UA

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