Phase diagrams of Si₁-xGex solid solution: a theoretical approach
dc.contributor.author | Jivani, A.R. | |
dc.contributor.author | Jani, A.R. | |
dc.date.accessioned | 2017-05-29T14:31:48Z | |
dc.date.available | 2017-05-29T14:31:48Z | |
dc.date.issued | 2012 | |
dc.description.abstract | In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting element. We have also investigated the phase diagram near the melting temperature as well as at low temperatures and compared with the available experimental results. Our calculated phase diagram near the melting point agrees well with the experimental data. | uk_UA |
dc.description.sponsorship | A.R. Jivani thanks University Grants Commission, New Delhi, India, for financial support (Grant No. 47- 625/08(WRO)) to carry out this research work. | uk_UA |
dc.identifier.citation | Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 64.70.kg, 64.75.Nx, 71.15.Nc, Dx | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118268 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Phase diagrams of Si₁-xGex solid solution: a theoretical approach | uk_UA |
dc.type | Article | uk_UA |
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