Phase diagrams of Si₁-xGex solid solution: a theoretical approach

dc.contributor.authorJivani, A.R.
dc.contributor.authorJani, A.R.
dc.date.accessioned2017-05-29T14:31:48Z
dc.date.available2017-05-29T14:31:48Z
dc.date.issued2012
dc.description.abstractIn this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting element. We have also investigated the phase diagram near the melting temperature as well as at low temperatures and compared with the available experimental results. Our calculated phase diagram near the melting point agrees well with the experimental data.uk_UA
dc.description.sponsorshipA.R. Jivani thanks University Grants Commission, New Delhi, India, for financial support (Grant No. 47- 625/08(WRO)) to carry out this research work.uk_UA
dc.identifier.citationPhase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 64.70.kg, 64.75.Nx, 71.15.Nc, Dx
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118268
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titlePhase diagrams of Si₁-xGex solid solution: a theoretical approachuk_UA
dc.typeArticleuk_UA

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