Temperature changes of the exciton transition energy in lead di-iodide nanofilms

dc.contributor.authorPugantseva, O.V.
dc.contributor.authorKramar, V.M.
dc.contributor.authorFesiv, I.V.
dc.contributor.authorKudryavtsev, O.O.
dc.date.accessioned2017-05-26T09:36:30Z
dc.date.available2017-05-26T09:36:30Z
dc.date.issued2013
dc.description.abstractAdduced in this work are the results of theoretical investigations devoted to the influence of spatial confinement effects, self-polarization of heterojunction planes and exciton-phonon interaction on values of the exciton transition energy in lead diiodide nanofilms placed into dielectric ambience (glass or polymer). The heterojunction is considered to be unloaded, nanosystem is modeled with an infinite deep quantum well and characterized by an essential difference between dielectric permeabilities in both sides of the heterojunction. Calculated in the work are dependences of the exciton energy on the nanofilm thickness and temperature. The results of calculations are in accordance with the known data of experimental measurements.uk_UA
dc.identifier.citationTemperature changes of the exciton transition energy in lead di-iodide nanofilms / O.V. Pugantseva, V.M. Kramar, I.V. Fesiv, O.O. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 170-176. — Бібліогр.: 29 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 73.21.Fg
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117684
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleTemperature changes of the exciton transition energy in lead di-iodide nanofilmsuk_UA
dc.typeArticleuk_UA

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