Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range

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dc.contributor.authorZorenko, A.V.
dc.contributor.authorKudryk, Ya.Ya.
dc.contributor.authorMarunenko, Yu.V.
dc.date.accessioned2017-05-26T17:39:43Z
dc.date.available2017-05-26T17:39:43Z
dc.date.issued2011
dc.description.abstractA procedure of mm- and submm-wave devices simulation based on the up-todate simulation techniques for bulk microwave structures is proposed. We demonstrate a possibility of making microwave radiation sources based on IMPATT diodes and frequency multipliers with frequency output of 280 GHz as well as detector sections with Schottky barrier diodes for the 220–325 GHz and 325–400 GHz frequency ranges.uk_UA
dc.description.sponsorshipThis work was made as part of the Project 2.3.1.3/33-ДП.uk_UA
dc.identifier.citationDevelopment and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range / A.V. Zorenko, Ya.Ya. Kudryk, Yu.V. Marunenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 411-415. — Бібліогр.: 8 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 07.57.Hm, 85.30.Hi
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117787
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleDevelopment and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency rangeuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4