Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

dc.contributor.authorBaranskii, P.I.
dc.contributor.authorBabich, V.M.
dc.contributor.authorVenger, E.F.
dc.date.accessioned2017-06-05T14:41:29Z
dc.date.available2017-06-05T14:41:29Z
dc.date.issued2001
dc.description.abstractEvolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed. These factors are: - dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type), - electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction. Keywords: electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction.uk_UA
dc.identifier.citationDevelopment of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 61.72.T, 71.55, 72.80.P
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119232
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleDevelopment of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductorsuk_UA
dc.typeArticleuk_UA

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