3C-6H transformation in heated cubic silicon carbide 3C-SiC
| dc.contributor.author | Vlaskina, S.I. | |
| dc.contributor.author | Mishinova, G.N. | |
| dc.contributor.author | Vlaskin, V.I. | |
| dc.contributor.author | Rodionov, V.E. | |
| dc.contributor.author | Svechnikov, G.S. | |
| dc.date.accessioned | 2017-05-26T17:41:58Z | |
| dc.date.available | 2017-05-26T17:41:58Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a polytypes joint after high temperature annealing were investigated. Fine structure at the energy of E = 2.73, 2.79 eV, E = 2.588 eV, and E = 2.48 eV that appeared after annealing was described. The role of stacking faults in the process of structure transformation was investigated. | uk_UA |
| dc.identifier.citation | 3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 71.55.Gs, 78.55.-m, Cr, 78.60.-b, 78.66.Hf | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117791 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | 3C-6H transformation in heated cubic silicon carbide 3C-SiC | uk_UA |
| dc.type | Article | uk_UA |
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