Ferromagnetism induced in diluted A₁₋xMnxB semiconductors
dc.contributor.author | Bryksa, V.P. | |
dc.contributor.author | Tarasov, G.G. | |
dc.contributor.author | Masselink, W.T. | |
dc.contributor.author | Nolting, W. | |
dc.contributor.author | Mazur, Yu.I. | |
dc.contributor.author | Salamo, G.J. | |
dc.date.accessioned | 2017-05-28T17:39:36Z | |
dc.date.available | 2017-05-28T17:39:36Z | |
dc.date.issued | 2004 | |
dc.description.abstract | Theoretical model has been developed for analysis of the peculiarities of new type of magnetism in diluted magnetic A₁₋xMnxB semiconductors. The coherent potential is introduced using the dynamic mean field theory (DMFT) approximation and the Baym- Kadanoff hypothesis valid for the case x < xc (xc is the percolation limit). | uk_UA |
dc.identifier.citation | Ferromagnetism induced in diluted A₁₋xMnxB semiconductors / V.P. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 43-51. — Бібліогр.: 22 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 72.15.Gd; 72.20.My; 73.61.Ga | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118113 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Ferromagnetism induced in diluted A₁₋xMnxB semiconductors | uk_UA |
dc.type | Article | uk_UA |
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