The effect of oxygen-containing anions on luminescent properties of CsI

dc.contributor.authorShpilinskaya, L.N.
dc.contributor.authorZaslavsky, B.G.
dc.contributor.authorKovaleva, L.V.
dc.contributor.authorVasetsky, S.I.
dc.contributor.authorKudin, A.M.
dc.contributor.authorMitichkin, A.I.
dc.contributor.authorCharkina, T.A.
dc.date.accessioned2017-06-13T14:51:12Z
dc.date.available2017-06-13T14:51:12Z
dc.date.issued2000
dc.description.abstractIt has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(SO₄) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO₃²⁻-Va⁺ (395 nm) and the structural one – Va⁺-Vc⁻ (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed.uk_UA
dc.identifier.citationThe effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 78.55.Fv, - m, 78.60.- b, Ya
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121092
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThe effect of oxygen-containing anions on luminescent properties of CsIuk_UA
dc.typeArticleuk_UA

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