The effect of oxygen-containing anions on luminescent properties of CsI
dc.contributor.author | Shpilinskaya, L.N. | |
dc.contributor.author | Zaslavsky, B.G. | |
dc.contributor.author | Kovaleva, L.V. | |
dc.contributor.author | Vasetsky, S.I. | |
dc.contributor.author | Kudin, A.M. | |
dc.contributor.author | Mitichkin, A.I. | |
dc.contributor.author | Charkina, T.A. | |
dc.date.accessioned | 2017-06-13T14:51:12Z | |
dc.date.available | 2017-06-13T14:51:12Z | |
dc.date.issued | 2000 | |
dc.description.abstract | It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(SO₄) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO₃²⁻-Va⁺ (395 nm) and the structural one – Va⁺-Vc⁻ (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed. | uk_UA |
dc.identifier.citation | The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 78.55.Fv, - m, 78.60.- b, Ya | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/121092 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | The effect of oxygen-containing anions on luminescent properties of CsI | uk_UA |
dc.type | Article | uk_UA |
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