Low temperature characteristics of germanium whiskers

Abstract

Magnetophonone oscillations of magnetoresistance in heavily doped n-Ge whiskers with impurity concentration that corresponds to metal-insulator transition were studied in the temperatures range 4.2-70 K in continuous and pulse magnetic fields up to 14 T and 35 T, respectively. The influence of uniaxial compressive and tentative strain on the magnetophonon oscillations of longitudinal and transverse magnetoresistance of n-Ge whiskers were studied, the intervalley transitions were determined, phonon energy as well as the effective masses of light and heavy electrons in n-Ge whiskers were estimated. Ge whiskers were used for creation of strain-temperature sensors, operating in high magnetic fields and at low temperatures.