Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system

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dc.contributor.authorTomashik, Z.F.
dc.contributor.authorLukiyanchuk, E.M.
dc.contributor.authorTomashik, V.M.
dc.date.accessioned2017-06-05T14:19:43Z
dc.date.available2017-06-05T14:19:43Z
dc.date.issued2004
dc.description.abstractDissolution of CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution process were ascertained. Also determined were the concentration limits for the solutions that can be used for chemical polishing the above-mentioned semiconductor materials.uk_UA
dc.identifier.citationChemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system / Z.F. Tomashik, E.M. Lukiyanchuk, V.M. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 452-455. — Бібліогр.: 6 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 81.65.Cf; 42.86.+b
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119223
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleChemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid systemuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4