Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system

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dc.contributor.authorHalyan, V.V.
dc.contributor.authorShevchuk, M.V.
dc.contributor.authorDavydyuk, G.Ye.
dc.contributor.authorVoronyuk, S.V.
dc.contributor.authorKevshyn, A.H.
dc.contributor.authorBulatetsky, V.V.
dc.date.accessioned2017-05-30T19:46:53Z
dc.date.available2017-05-30T19:46:53Z
dc.date.issued2009
dc.description.abstractA region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy alloys, and Tgr and KG were calculated using them. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic distances within the first and second coordination spheres were determined.uk_UA
dc.identifier.citationGlass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.43.Fs
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118689
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleGlass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ systemuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 2